IRFP22N50A DATASHEET PDF

Vishay Siliconix. Q g Max. Q gs nC. Q gd nC. Lead Pb -free.

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Repetitive rating; pulse width limited by maximum junction temperature see fig. C, Mar www. Vishay Siliconix. Q g Max. Q gs nC. Q gd nC. Lead Pb -free. Drain-Source Voltage. Gate-Source Voltage. Continuous Drain Current. Pulsed Drain Current a. Linear Derating Factor. Single Pulse Avalanche Energy b.

Repetitive Avalanche Current a. Repetitive Avalanche Energy a. Maximum Power Dissipation. Operating Junction and Storage Temperature Range. Soldering Recommendations Peak Temperature. Mounting Torque. Document Number: C, Mar This datasheet is subject to change without notice. No Preview Available! Maximum Junction-to-Ambient. Case-to-Sink, Flat, Greased Surface. R thJA. R thCS. Maximum Junction-to-Case Drain.

R thJC. Drain-Source Breakdown Voltage. V DS Temperature Coefficient. Gate-Source Threshold Voltage. Gate-Source Leakage. Zero Gate Voltage Drain Current. Drain-Source On-State Resistance. Forward Transconductance. V GS th. I GSS. I DSS. R DS on. Input Capacitance.

Output Capacitance. Reverse Transfer Capacitance. C iss. C oss. C rss. Effective Output Capacitance. Total Gate Charge. Gate-Source Charge. Gate-Drain Charge. Turn-On Delay Time. Rise Time. Turn-Off Delay Time. Fall Time. Drain-Source Body Diode Characteristics. C oss eff. Continuous Source-Drain Diode Current.

Pulsed Diode Forward Current a. Body Diode Voltage. Body Diode Reverse Recovery Time. Body Diode Reverse Recovery Charge. Forward Turn-On Time. Vishay Intertechnology Electronic Components Datasheet.

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