HRF3205 DATASHEET PDF

Data Sheet. December These are N-Channel enhancement mode silicon gate. They are advanced power. These types can be operated directly. NOTE: Calculated continuous current based on maximum.

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Data Sheet. June File Number These are N-Channel enhancement mode silicon gate. They are advanced power. These types can be operated directly. NOTE: Calculated continuous current based on maximum. Package limited to 75A. Ordering Information. NOTE: When ordering, use the entire part number.

Drain to Source Voltage Note 1. V DSS. V DGR. Gate to Source Voltage. Drain Current. Pulsed Drain Current Note 2. Pulsed Avalanche Rating. Figure Power Dissipation. Derate Above 25 o C. Operating and Storage Temperature. Maximum Temperature for Soldering.

Leads at 0. Package Body for 10s, See Techbrief This is a stress only rating and operation of the. Drain to Source Breakdown Voltage. Gate to Source Threshold Voltage. Zero Gate Voltage Drain Current. Gate to Source Leakage Current. Breakdown Voltage Temperature. I DSS. I GSS. Drain to Source On Resistance. Turn-On Delay Time. Rise Time. Turn-Off Delay Time. Fall Time. Total Gate Charge.

Gate to Source Charge. Input Capacitance. Output Capacitance. C ISS. C OSS. Figure 6. Reverse Transfer Capacitance.

Internal Source Inductance. Internal Drain Inductance. C RSS. Measured From the Drain. Lead, 6mm 0. Package to Center of Die.

Internal Devices In-. Measured From the Source. Thermal Resistance Junction to Case. Thermal Resistance Junction to. Download HRF Datasheet. All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.

These types can be operated directly from integrated circuits. NOTE: Calculated continuous current based on maximum allowable junction temperature. Package limited to 75A continuous, see Figure 9. NOTE: 1.

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